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Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 77
Issue DateTitleAuthor(s)
2018The Tesla Currents in Electrodynamics0000-0001-5324-1834
2019-02International journal of engineering sciences & research technology , The postulate of the equivalence of masses or the law of their proportionality?0000-0001-5324-1834; 0000-0002-1478-7946
2019-02Maxwell’s error and its consequences for physics0000-0001-5324-1834; 0000-0002-1478-7946
2019-01-01Magnetic Flow Scattering in Ferrite Rings0000-0001-5324-1834; 0000-0002-1478-7946
2008-02-09Coulomb interaction does not spread instantaneously0000-0002-1369-5708; 0000-0001-5324-1834
2019-03-28Accelerated Expansion of the Universe via Energy Conservation-
2009Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential39945; 16198
2009Hole states in diamond p-delta-doped field effect transistors39945
2018-02-08Giant oscillating magnetoresistance in silicene-based structures39945
2014-04Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure39945
2015-07Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs39945
2016-03Angle-dependent bandgap engineering in gated graphene superlattices39945
2017-04-04Self-similar conductance patterns in graphene Cantor-like structures39945
2016-03-14Angle-dependent bandgap engineering in gated graphene superlattices39945
2016-10-21Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects39945
2012-04The hydrostatic pressure effects on intersubband optical absorption of n -type d-doped quantum well in GaAs39945
2011-11-29Improvement of the quantum confined Stark effect characteristics by means of energy band profile modulation: The case of Gaussian quantum wells39945
2009-08Concentration and band offset dependence of the electronic basic transition of cubic InxGa1−xN/InyGa1−yN quantum wells39945
2008-12-12Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure39945
2008-06k p calculations of p-type d-doped quantum wells in Si39945
Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 77