The hydrostatic pressure effects on intersubband optical absorption of n -type d-doped quantum well in GaAs

Abstract

We have theoretically calculated the effects of hydrostatic pressure on subband structure and optical transitions in n -delta-doped quantum well (DDQW) in GaAs for different values of energy. The electronic structure of DDQW under the hydrostatic pressure is determined by solving the Schrödinger equation and a simple algebraic method. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied hydrostatic pressure. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.