Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/666
Title: Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects
Authors: 39945
Issue Date: 21-Oct-2016
Publisher: Elsevier
Abstract: The electronic structure and the transport phenomena of d-MIGFETs have been studied in an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed within the effective mass approximation and relative mobility formula, respectively. Both the electronic structure and the transport properties are calculated as dependent on the applied magnetic field (B), the aluminum molar fraction (x) and the contact voltage in one of the gates (VC1). It was found that the mobility and conductivity are enhanced by increasing the magnetic field for appropriate aluminum molar fraction and contact voltage. In particular, the mobility (conductivity) is improved almost 26% (32%) for VC1 ¼ 900 meV (850 meV), x ¼ 0.2, and B ¼ 20 T.
URI: http://hdl.handle.net/20.500.11845/666
ISSN: 0749-6036
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- UA Física

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