Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/817
Title: Hole states in diamond p-delta-doped field effect transistors
Authors: 39945
Issue Date: 2009
Publisher: IOP PUBLISHING
Abstract: The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.
URI: http://localhost/xmlui/handle/20.500.11845/817
ISSN: 1742-6588
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- UA Física

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