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Title: Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure
Authors: Martínez Orozco, Juan Carlos
Rodríguez Vargas, Isaac
Duque, Carlos Alberto
Mora Ramos, Miguel
Gaggero Sager, Luís Manuel
Issue Date: 12-Dec-2008
Publisher: Wiley
Abstract: Based on a Thomas–Fermi envelope function scheme weperform the calculation of the electronic structure of a GaAsatomic layer doped field effect transistors (ALD-FET). We calculate the electronic structure for the device as a function of the involved parameters, in particular we study the effectsof the hydrostatic pressure onto the electronic level structure in order to investigate the formation of high conductivityelectron channels in such devices. We consider the pressure-induced Γ–X crossover within the conduction band as a pos-sible effect causing the enhancement of the associated two-dimensional carrier densities.
ISSN: 0370-1972
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- UA Física

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