Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/639
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dc.contributor39945es_ES
dc.contributor.otherhttps://orcid.org/0000-0001-8373-1535-
dc.coverage.spatialGlobales_ES
dc.creatorMartínez Orozco, Juan Carlos-
dc.creatorRodríguez Vargas, Isaac-
dc.creatorDuque, Carlos Alberto-
dc.creatorMora Ramos, Miguel-
dc.creatorGaggero Sager, Luís Manuel-
dc.date.accessioned2018-08-22T14:50:13Z-
dc.date.available2018-08-22T14:50:13Z-
dc.date.issued2008-12-12-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn0370-1972es_ES
dc.identifier.issn1521-3951es_ES
dc.identifier.urihttp://hdl.handle.net/20.500.11845/639-
dc.identifier.urihttps://doi.org/10.48779/cm22-cm31-
dc.description.abstractBased on a Thomas–Fermi envelope function scheme weperform the calculation of the electronic structure of a GaAsatomic layer doped field effect transistors (ALD-FET). We calculate the electronic structure for the device as a function of the involved parameters, in particular we study the effectsof the hydrostatic pressure onto the electronic level structure in order to investigate the formation of high conductivityelectron channels in such devices. We consider the pressure-induced Γ–X crossover within the conduction band as a pos-sible effect causing the enhancement of the associated two-dimensional carrier densities.es_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.relationhttps://onlinelibrary.wiley.com/doi/epdf/10.1002/pssb.200880530es_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subject.classificationCIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]es_ES
dc.subject.otherThomas–Fermi envelope function schemees_ES
dc.subject.otherelectronic structurees_ES
dc.subject.otherGaAsatomic layeres_ES
dc.titleStudy of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressurees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- UA Física

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