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Issue Date	Title	Author(s)
15-Feb-2007	Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel
Dec-2004	Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel
12-Dec-2008	Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure	Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Duque, Carlos Alberto; Mora Ramos, Miguel; Gaggero Sager, Luís Manuel
Jul-2003	Thomas–Fermi–Dirac theory of the hole gas of a double p-type d-doped GaAs quantum wells	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Velasco, Víctor
Apr-2004	An alternative way of calculating the superlattice Green function for discrete media	Vlaev, Stoyan; Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Velasco, Víctor
Feb-2006	Subband and transport calculations in double -type -doped quantum wells in Si	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel
Feb-2005	Thomas–Fermi–Dirac calculations of valence band states in two p-type delta-doped ZnSe quantum wells	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Martínez Orozco, Juan Carlos