Please use this identifier to cite or link to this item:
http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/632| Title: | Subband and transport calculations in double -type -doped quantum wells in Si |
| Authors: | Rodríguez Vargas, Isaac Gaggero Sager, Luís Manuel |
| Issue Date: | Feb-2006 |
| Publisher: | American Institute of Physics |
| Abstract: | The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the subband level structure. The longitudinal and transverse levels are obtained as a function of the impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula for the mobility, which allows us to discern the optimum distance between wells for maximum mobility. |
| URI: | http://hdl.handle.net/20.500.11845/632 https://doi.org/10.48779/de7x-8850 |
| ISSN: | 0021-8979 1089-7550 |
| Other Identifiers: | info:eu-repo/semantics/publishedVersion |
| Appears in Collections: | *Documentos Académicos*-- UA Física |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Subband and transport calculations in double.pdf | 263,65 kB | Adobe PDF |  View/Open |
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