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Title: Subband and transport calculations in double -type -doped quantum wells in Si
Authors: Rodríguez Vargas, Isaac
Gaggero Sager, Luís Manuel
Issue Date: Feb-2006
Publisher: American Institute of Physics
Abstract: The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the subband level structure. The longitudinal and transverse levels are obtained as a function of the impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula for the mobility, which allows us to discern the optimum distance between wells for maximum mobility.
ISSN: ‎0021-8979
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- UA Física

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