• The Tesla Currents in Electrodynamics 

  Chubykalo, Andrew; Kuligin, Viktor (Canadian Center of Science and Education, 2018)

  The paper theoretically shows that the Maxwell equations in the Lorentz gauge deal with not only inertial charged particles, but also charged particles that do not have inertia (virtual charges). Virtual charges appear on ...
• International journal of engineering sciences & research technology , The postulate of the equivalence of masses or the law of their proportionality? 

  Chubykalo, Andrew; Espinoza, Augusto; Kuligin, Viktor (International Journal of Engineering Sciences & Research Technology, 2019-02)

  The main sources of GTR problems are analyzed. First, physicists and geometers in explaining phenomena do not take into account the simultaneous existence of two spaces (linear space-time and curvilinear space-time). Secondly, ...
• Maxwell’s error and its consequences for physics 

  Chubykalo, Andrew; Espinoza, Augusto; Kuligin, Viktor; Korneva, Maria (National Academy of Agricultural Sciences (NAAS), 2019-02)

  The analysis of errors in the theories of modern physics led us to an important conclusion. There are initial errors, which then “generate” a spectrum of sec-ondary errors (erroneous consequences). We found an error made ...
• Magnetic Flow Scattering in Ferrite Rings 

  Chubykalo, Andrew; Espinoza, Augusto; Kuligin, Viktor (International Journal of Science and Engineering Invention (IJSEI), 2019-01-01)

  It is shown that, contrary to the prevailing opinion, the scattering of the magnetic flux, even in ferrites with high magnetic permeability, is very large. A description of the technique for measuring the parameters of ...
• Coulomb interaction does not spread instantaneously 

  Rumen, Ivanov; Andrew, Chubykalo; Rivera Juárez, Juan M. (Cornell University, 2008-02-09)

  The experiment is described which shows that Coulomb interaction spreads with a limit velocity and thus this kind of interaction cannot be considered as so called “instantaneous action at a distance”
• Accelerated Expansion of the Universe via Energy Conservation 

  Ortíz González, Carlos Alberto (Universidad Autónoma de Zacatecas, 2019-03-28)

  This paper analyzes the boundary term of the Hilbert-Einstein action for an FRW metric, and uses it to set the conditions of the Einstein’s Field Equations. By means of the energy conservation equation, we identify a new ...
• Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential 

  Rodríguez Vargas, Isaac; Madrigal Melchor, Jesús; Vlaev, Stoyan (IOP PUBLISHING, 2009)

  We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp3s ∗ tight-binding approximation including spin for the hole level ...
• Hole states in diamond p-delta-doped field effect transistors 

  Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Mora Ramos, Miguel (IOP PUBLISHING, 2009)

  The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the ...
• Giant oscillating magnetoresistance in silicene-based structures 

  Outmane, Oubram; Navarro, Oracio; Rodríguez Vargas, Isaac; Guzmán, E. J.; Cisneros Villalobos, Luis; Velásquez Aguilar, J.G. (AIP Publishing, 2018-02-08)

  Ballistic electron transport in a silicene structure, composed of a pair of magnetic gates, in the ferromagnetic and an-tiferromagnetic configuration is studied. This theoretical study has been done using the matrix transfer ...
• Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure 

  Outmane, Oubram; Rodríguez Vargas, Isaac; Martínez Orozco, Juan Carlos (Sociedad Mexicana de Física, 2014-04)

  The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in δ-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the ...
• Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs 

  Outmane, Oubram; Gaggero Sager, Luís Manuel; Rodríguez Vargas, Isaac (Sociedad Mexicana de Física, 2015-07)

  The effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier diode of metal/n-GaAs are studied using a simple algebraic method. The method relies on the dependence of the parameters of the ...
• Angle-dependent bandgap engineering in gated graphene superlattices 

  García Cervantes, Heraclio; Gaggero Sager, Luís Manuel; Sotolongo Costa, Oscar; Rodríguez Vargas, Isaac (AIP Publishing, 2016-03)

  Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the ...
• Self-similar conductance patterns in graphene Cantor-like structures 

  García Cervantes, Heraclio; Gaggero Sager, Luís Manuel; Díaz Guerrero, Dan Sidney; Sotolongo Costa, Oscar; Rodríguez Vargas, Isaac (Springer, 2017-04-04)

  Graphene has proven to be an ideal system for exotic transport phenomena. In this work, we report another exotic characteristic of the electron transport in graphene. Namely, we show that the linearregime conductance can ...
• Angle-dependent bandgap engineering in gated graphene superlattices 

  García Cervantes, Heraclio; Gaggero Sager, Luís Manuel; Sotolongo Costa, Oscar; Naumis, Gerardo; Rodríguez Vargas, Isaac (American Institute of Physics, 2016-03-14)

  Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the ...
• Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects 

  Outmane, Oubram; Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Cisneros Villalobos, Luis; Bassam, Ali; Velásquez Aguilar, J.G.; Limon Mendoza, Mario (Elsevier, 2016-10-21)

  The electronic structure and the transport phenomena of d-MIGFETs have been studied in an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed within the effective mass approximation and ...
• The hydrostatic pressure effects on intersubband optical absorption of n -type d-doped quantum well in GaAs 

  Outmane, Oubram; Navarro, Oracio; Gaggero Sager, Luís Manuel; Rodríguez Vargas, Isaac (Elsevier, 2012-04)

  We have theoretically calculated the effects of hydrostatic pressure on subband structure and optical transitions in n -delta-doped quantum well (DDQW) in GaAs for different values of energy. The electronic structure of ...
• Improvement of the quantum confined Stark effect characteristics by means of energy band profile modulation: The case of Gaussian quantum wells 

  Ramírez Morales, Alejandro; Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac (AIP Publishing, 2011-11-29)

  We study the quantum confined stark effect (QCSE) characteristics in Gaussian quantum wells (GQW). This special energy band profile is built varying the aluminum concentration of the AlGaAs ternary alloy in Gaussian ...
• Concentration and band offset dependence of the electronic basic transition of cubic InxGa1−xN/InyGa1−yN quantum wells 

  Hernández Cocoletzi, Heriberto; Contreras Solorio, David Armando; Vlaev, Stoyan; Rodríguez Vargas, Isaac (Elsevier, 2009-08)

  We calculate the transition energy from the first level of holes to the first level of electrons for cubic InxGa1−xN/InyGa1−yN quantum wells. We employ the empirical tight binding approach with an sp3s* orbital basis, ...
• Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure 

  Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Duque, Carlos Alberto; Mora Ramos, Miguel; Gaggero Sager, Luís Manuel (Wiley, 2008-12-12)

  Based on a Thomas–Fermi envelope function scheme weperform the calculation of the electronic structure of a GaAsatomic layer doped field effect transistors (ALD-FET). We calculate the electronic structure for the device ...
• k p calculations of p-type d-doped quantum wells in Si 

  Rodríguez Vargas, Isaac; Mora Ramos, Miguel (Elsevier, 2008-06)

  We present the hole subband structure calculation in single and double p-type δ-doped quantum wells in Si based on the Luttinger–Kohn Hamiltonian. The valence band bending and the hole states are calculated within the ...

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