García Cervantes, Heraclio; Gaggero Sager, Luís Manuel; Sotolongo Costa, Oscar; Rodríguez Vargas, Isaac
Resumen:
Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar
properties as well as its possible technological implications. Among these characteristics
we can mention: the extra Dirac points in the dispersion relation and the
highly anisotropic propagation of the charge carriers. However, despite the intense
research that is carried out in GSs, so far there is no report about the angular
dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence
of TG as a function of the angle of the incident Dirac electrons in a rather
simple Electrostatic GS (EGS). Our results show that the angular dependence of
the TG is intricate, since for moderated angles the dependence is parabolic, while
for large angles an exponential dependence is registered. We also find that the
TG can be modulated from meV to eV, by changing the structural parameters of
the GS. These characteristics open the possibility for an angle-dependent bandgap
engineering in graphene