Outmane, Oubram; Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Cisneros Villalobos, Luis; Bassam, Ali; Velásquez Aguilar, J.G.; Limon Mendoza, Mario
Resumen:
The electronic structure and the transport phenomena of d-MIGFETs have been studied in
an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed
within the effective mass approximation and relative mobility formula, respectively.
Both the electronic structure and the transport properties are calculated as
dependent on the applied magnetic field (B), the aluminum molar fraction (x) and the
contact voltage in one of the gates (VC1). It was found that the mobility and conductivity
are enhanced by increasing the magnetic field for appropriate aluminum molar fraction
and contact voltage. In particular, the mobility (conductivity) is improved almost 26% (32%)
for VC1 ¼ 900 meV (850 meV), x ¼ 0.2, and B ¼ 20 T.