Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Duque, Carlos Alberto; Mora Ramos, Miguel; Gaggero Sager, Luís Manuel
Resumen:
Based on a Thomas–Fermi envelope function scheme weperform the calculation of the electronic structure of a GaAsatomic layer doped field effect transistors (ALD-FET). We calculate the electronic structure for the device as a function of the involved parameters, in particular we study the effectsof the hydrostatic pressure onto the electronic level structure in order to investigate the formation of high conductivityelectron channels in such devices. We consider the pressure-induced Γ–X crossover within the conduction band as a pos-sible effect causing the enhancement of the associated two-dimensional carrier densities.