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Issue DateTitleAuthor(s)
12-Dec-2008Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressureMartínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Duque, Carlos Alberto; Mora Ramos, Miguel; Gaggero Sager, Luís Manuel
Nov-2017Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double δ-doped GaAs quantum wellsMartínez Orozco, Juan Carlos; Rojas Briseño, J. G.; Rodríguez Magdaleno, Karla Arely; Rodríguez Vargas, Isaac; Mora Ramos, Miguel Eduardo; Restrepo Arango, Ricardo León; Ungan, Fatih; Kasapoǧlu, Esin; Duque, Carlos Alberto
Mar-2018Intermediate band formation in a d-doped like QW superlattices of GaAs/AlxGa1 xAs for solar cell designdel Río de Santiago, Antonio; Martínez Orozco, Juan Carlos; Rodríguez Magdaleno, Karla Arely; Contreras Solorio, David Armando; Rodríguez Vargas, Isaac; Ungan, Fatih
29-Nov-2011Improvement of the quantum confined Stark effect characteristics by means of energy band profile modulation: The case of Gaussian quantum wellsRamírez Morales, Alejandro; Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac
Feb-2005Thomas–Fermi–Dirac calculations of valence band states in two p-type delta-doped ZnSe quantum wellsRodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Martínez Orozco, Juan Carlos
Apr-2014Refractive index changes in n-type delta-doped GaAs under hydrostatic pressureOutmane, Oubram; Rodríguez Vargas, Isaac; Martínez Orozco, Juan Carlos
2009Hole states in diamond p-delta-doped field effect transistorsMartínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Mora Ramos, Miguel