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Título : Controlling the optical absorption properties of d-FETs by means of contact voltage and hydrostatic pressure effects
Autor : 39945
0000-0003-0087-8991
Fecha de publicación : 15-mar-2019
Editorial : Elsevier
Resumen : The effects of contact voltage and hydrostatic pressure on subband structure and optical transitions in GaAs delta-Field Effect Transistor (δ-FET) are theoretically studied. The electronic structure of δ-FET under hydrostatic pressure is determined by solving the Schrödinger equation using a theoretical model at low pressure. It is found that the subband energies and intersubband optical absorption on δ-FET are quite sensitive to the contact voltage and applied hydrostatic pressure. Wherein, a blue-shifting as hydrostatic pressure increases and a red-shifting as the contact potential increases, are shown. Our results could be important for infrared optical device applications and useful in the design of devices based on contact voltage and hydrostatic pressure-dependent optical processes.
URI : http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/1561
ISSN : 0749-6036
Otros identificadores : info:eu-repo/semantics/publishedVersion
Aparece en las colecciones: *Documentos Académicos*-- UA Cien. y Tec. de la Luz y la Mat. (LUMAT)

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