Subband and transport calculations in double -type -doped quantum wells in Si

Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel

dc.contributor	39945	es_ES
dc.contributor.other	https://orcid.org/0000-0003-0087-8991
dc.coverage.spatial	Global	es_ES
dc.creator	Rodríguez Vargas, Isaac
dc.creator	Gaggero Sager, Luís Manuel
dc.date.accessioned	2018-08-13T16:15:31Z
dc.date.available	2018-08-13T16:15:31Z
dc.date.issued	2006-02
dc.identifier	info:eu-repo/semantics/publishedVersion	es_ES
dc.identifier.issn	‎0021-8979	es_ES
dc.identifier.issn	1089-7550	es_ES
dc.identifier.uri	http://hdl.handle.net/20.500.11845/632
dc.identifier.uri	https://doi.org/10.48779/de7x-8850
dc.description.abstract	The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the subband level structure. The longitudinal and transverse levels are obtained as a function of the impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula for the mobility, which allows us to discern the optimum distance between wells for maximum mobility.	es_ES
dc.language.iso	eng	es_ES
dc.publisher	American Institute of Physics	es_ES
dc.relation	https://aip.scitation.org/doi/10.1063/1.2168024	es_ES
dc.relation.uri	generalPublic	es_ES
dc.rights	Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.source	Journal of Applied Physics Vol. 99, 2006	es_ES
dc.subject.classification	CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]	es_ES
dc.subject.other	Thomas-Fermi approximation	es_ES
dc.subject.other	double n-type	es_ES
dc.subject.other	Hartree-Fock potential	es_ES
dc.title	Subband and transport calculations in double -type -doped quantum wells in Si	es_ES
dc.type	info:eu-repo/semantics/article	es_ES