Resumen:
The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in
Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the
subband level structure. The longitudinal and transverse levels are obtained as a function of the
impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an
impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula
for the mobility, which allows us to discern the optimum distance between wells for maximum
mobility.