Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Mora Ramos, Miguel Eduardo; Duque, Carlos Alberto
Resumen:
The study of the electronic structure in GaAs-based delta-doped field effect transistors under applied hydrostatic pressure is presented. A combination of the depletion approximation and the local density Thomas-Fermi theory is used to model the potential energy profile. We present a discussion on the possible effect of the hydrostatic pressure in the formation of high conductivity channels in the system.