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Title: Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure
Authors: 39645
Issue Date: 2008
Publisher: Elsevier
Abstract: The study of the electronic structure in GaAs-based delta-doped field effect transistors under applied hydrostatic pressure is presented. A combination of the depletion approximation and the local density Thomas-Fermi theory is used to model the potential energy profile. We present a discussion on the possible effect of the hydrostatic pressure in the formation of high conductivity channels in the system.
ISSN: 0026-2692
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

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