1. Repositorio Institucional Caxcán
  2. Unidad Académica de Física
  3. *Documentos Académicos*-- UA Física
Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/637
Full metadata record
DC FieldValueLanguage
dc.contributor39945es_ES
dc.contributor.otherhttps://orcid.org/0000-0003-0087-8991-
dc.coverage.spatialGlobales_ES
dc.creatorRodríguez Vargas, Isaac-
dc.creatorGaggero Sager, Luís Manuel-
dc.date.accessioned2018-08-22T14:49:51Z-
dc.date.available2018-08-22T14:49:51Z-
dc.date.issued2007-02-15-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn0921-4526es_ES
dc.identifier.urihttp://hdl.handle.net/20.500.11845/637-
dc.identifier.urihttps://doi.org/10.48779/8zp5-2k08-
dc.description.abstractWe present the electronic structure calculation of two closely p-type -doped quantum wells within the lines of the Thomas–Fermi–Dirac (TFD) theory. The distance between the impurity planes as well as the impurity density of the -doped wells is varied. The exchange effects are also considered in the present study. We have paid special attention to the split-off band and its influence on the subband hole levels. We also calculate the mobility ratio of double -doped (DDD) quantum wells in Si with respect to a single -doped (SDD) one, finding the optimum distance between the wells for maximum mobility. Our results are in a good agreement with respect to the experimental data available.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.relationhttps://ac.els-cdn.com/S0921452606014803/1-s2.0-S0921452606014803-main.pdf?_tid=b7a50a1a-2940-4ec8-b0a4-fbedcd23e5a5&acdnat=1534180833_239d79277fe180873d7b6e477b6b5f9aes_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourcePhysica B: Condensed Matter Volume Vol. 389, No. 2, 15 de febrero, 2007, Pág. 227-233es_ES
dc.subject.classificationCIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]es_ES
dc.subject.otherHole subband levelses_ES
dc.subject.otherDouble -doped QWses_ES
dc.subject.otherThomas–Fermi–Dirac approximationes_ES
dc.titleHole-level structure of double -doped quantum wells in Si: The influence of the split-off bandes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- UA Física

Files in This Item:
File Description SizeFormat 
Hole level structure.pdf297,09 kBAdobe PDFThumbnail
View/Open
Show simple item record


This item is licensed under a Creative Commons License Creative Commons