Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2496
Title: Nonlinear absorption coefficient and relative refraction index change for an asymmetrical double δ-doped quantum well in GaAs with a Schottky barrier potential
Authors: 39645
39945
Issue Date: 1-Sep-2013
Publisher: Elsevier
Abstract: In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double -doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the -doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single -doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions.
URI: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2496
ISSN: 0921-4526
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

Files in This Item:
File Description SizeFormat 
Nonlinear absorption coefficient and relative.pdf225,13 kBAdobe PDFView/Open


This item is licensed under a Creative Commons License Creative Commons