Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2451
Title: Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well
Authors: 39645
Issue Date: 8-Nov-2016
Publisher: Wiley
Abstract: In this work, the study of the 1s‐like exciton states and binding energy is presented for coupled double zinc blende GaN/InGaN quantum wells. The effective mass approximation and a variational procedure are the key theoretical tools used. The significant role of the position‐dependent effective mass is highlighted. It is found that the correct inclusion of position‐dependent masses is the cause of a noticeable difference in exciton energies with respect to the use of constant effective mass. In addition, the influence of the interaction of electrons and holes with the central barrier, and the effect of its size are particularly discussed.
URI: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2451
ISSN: 1521-3951
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

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