Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/1988
Title: Use of hafnium(IV) oxide in biosensors
Authors: Ortiz-Dosal, Luis Carlos
Issue Date: 6-Sep-2018
Publisher: Taylor and Francis
Abstract: Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. This work describes the use of this material in biosensors based on field-effect transistors to detect ions and DNA, in immunosensors to detect an antigen-antibody complex, its use as a contrast material in computed tomography scans and the possibility of using it in optic biosensors in the infrared region. Its low cost and versatility in the field of biosensors is underscored.
Description: Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. This work describes the use of this material in biosensors based on field-effect transistors to detect ions and DNA, in immunosensors to detect an antigen-antibody complex, its use as a contrast material in computed tomography scans and the possibility of using it in optic biosensors in the infrared region. Its low cost and versatility in the field of biosensors is underscored.
URI: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/1988
ISSN: 15321819
15324230
Other Identifiers: info:eu-repo/semantics/publishedVersion
Appears in Collections:*Documentos Académicos*-- M. en C. e Ing. de los Materiales

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