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dc.contributor | 39945 | es_ES |
dc.contributor.other | https://orcid.org/0000-0001-8373-1535 | |
dc.coverage.spatial | Global | es_ES |
dc.creator | Martínez Orozco, Juan Carlos | |
dc.creator | Rodríguez Vargas, Isaac | |
dc.creator | Mora Ramos, Miguel | |
dc.date.accessioned | 2019-03-19T20:18:46Z | |
dc.date.available | 2019-03-19T20:18:46Z | |
dc.date.issued | 2009 | |
dc.identifier | info:eu-repo/semantics/publishedVersion | es_ES |
dc.identifier.issn | 1742-6588 | es_ES |
dc.identifier.uri | http://localhost/xmlui/handle/20.500.11845/817 | |
dc.identifier.uri | https://doi.org/10.48779/94m7-ex50 | |
dc.description.abstract | The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IOP PUBLISHING | es_ES |
dc.relation | https://iopscience.iop.org/article/10.1088/1742-6596/167/1/012065/meta | es_ES |
dc.relation.uri | generalPublic | es_ES |
dc.rights | Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/3.0/us/ | * |
dc.source | Journal of Physics: Conference Series, Vol. 167, No. 1 pp. 1-5 | es_ES |
dc.subject.classification | CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1] | es_ES |
dc.subject.other | p-delta-doping in diamond | es_ES |
dc.subject.other | e high density two-dimensional hole gases | es_ES |
dc.subject.other | local-density Thomas-Fermi-based | es_ES |
dc.title | Hole states in diamond p-delta-doped field effect transistors | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
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