Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band

Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel

dc.contributor	39945	es_ES
dc.contributor.other	https://orcid.org/0000-0003-0087-8991
dc.coverage.spatial	Global	es_ES
dc.creator	Rodríguez Vargas, Isaac
dc.creator	Gaggero Sager, Luís Manuel
dc.date.accessioned	2018-08-22T14:49:51Z
dc.date.available	2018-08-22T14:49:51Z
dc.date.issued	2007-02-15
dc.identifier	info:eu-repo/semantics/publishedVersion	es_ES
dc.identifier.issn	0921-4526	es_ES
dc.identifier.uri	http://hdl.handle.net/20.500.11845/637
dc.identifier.uri	https://doi.org/10.48779/8zp5-2k08
dc.description.abstract	We present the electronic structure calculation of two closely p-type -doped quantum wells within the lines of the Thomas–Fermi–Dirac (TFD) theory. The distance between the impurity planes as well as the impurity density of the -doped wells is varied. The exchange effects are also considered in the present study. We have paid special attention to the split-off band and its influence on the subband hole levels. We also calculate the mobility ratio of double -doped (DDD) quantum wells in Si with respect to a single -doped (SDD) one, finding the optimum distance between the wells for maximum mobility. Our results are in a good agreement with respect to the experimental data available.	es_ES
dc.language.iso	eng	es_ES
dc.publisher	Elsevier	es_ES
dc.relation	https://ac.els-cdn.com/S0921452606014803/1-s2.0-S0921452606014803-main.pdf?_tid=b7a50a1a-2940-4ec8-b0a4-fbedcd23e5a5&acdnat=1534180833_239d79277fe180873d7b6e477b6b5f9a	es_ES
dc.relation.uri	generalPublic	es_ES
dc.rights	Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.source	Physica B: Condensed Matter Volume Vol. 389, No. 2, 15 de febrero, 2007, Pág. 227-233	es_ES
dc.subject.classification	CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]	es_ES
dc.subject.other	Hole subband levels	es_ES
dc.subject.other	Double -doped QWs	es_ES
dc.subject.other	Thomas–Fermi–Dirac approximation	es_ES
dc.title	Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band	es_ES
dc.type	info:eu-repo/semantics/article	es_ES