k · p calculations for double p-type  -doped quantum wells in GaAs

Rodríguez Vargas, Isaac; Mora Ramos, Miguel

dc.contributor	39945	es_ES
dc.contributor.other	https://orcid.org/0000-0003-0087-8991
dc.coverage.spatial	Global	es_ES
dc.creator	Rodríguez Vargas, Isaac
dc.creator	Mora Ramos, Miguel
dc.date.accessioned	2018-08-13T16:20:21Z
dc.date.available	2018-08-13T16:20:21Z
dc.date.issued	2006-07-11
dc.identifier	info:eu-repo/semantics/publishedVersion	es_ES
dc.identifier.issn	0749-6036	es_ES
dc.identifier.uri	http://hdl.handle.net/20.500.11845/633
dc.identifier.uri	https://doi.org/10.48779/m67t-1y67
dc.description.abstract	The hole subband structure in double p-type -doped quantum wells in GaAs is computed with the use of the 4 × 4 k · p Hamiltonian. The Thomas–Fermi–Dirac approach is implemented for the description of the valence band bending, and the hole states at the Brillouin zone center are calculated along its lines, within the effective mass approximation. The zone center eigenstates obtained are then used to diagonalize the k · p Hamiltonian for non-zero k. The hole subband structure is analyzed as a function of the impurity density and the distance between wells.	es_ES
dc.language.iso	eng	es_ES
dc.publisher	Elsevier	es_ES
dc.relation	https://doi.org/ 10.1016/j.spmi.2006.05.006.	es_ES
dc.relation.uri	generalPublic	es_ES
dc.rights	Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.source	Superlattices and Microstructures, Vol. 40, 2006, Pág. 100–112	es_ES
dc.subject.classification	CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]	es_ES
dc.subject.other	Hole subband structure	es_ES
dc.subject.other	Double -doped quantum wells	es_ES
dc.subject.other	k · p approximation	es_ES
dc.title	k · p calculations for double p-type -doped quantum wells in GaAs	es_ES
dc.type	info:eu-repo/semantics/article	es_ES