Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Martínez Orozco, Juan Carlos
Resumen:
We present the hole sub-band structure study in two p-type δ-doped ZnSe QW’s. An analytical expression
for the Hartree–Fock potential is obtained following the lines of the Thomas–Fermi–Dirac (TFD) approximation.
We have analyzed the dependence of the hole energy levels to the impurity density and the
interlayer distance between wells. The exchange effects are also included in the present survey. We find
that many body effects cannot be ignored because these are really important in the calculation at least in
the low concentration regime. We have obtained an energy difference between the top of the valence band
and the ground energy of the heavy hole ladder of E0 = 29.0 meV 0 ( 2 791eV) g E - E = . in good agreement
with the experimental reports ( DAP E = 2.792 eV) available. We calculate the mobility ratio between
double δ-doped QW’s and simple δ-doped QW based on a phenomenological formula. We find the optimum
interlayer distance between wells for maximum mobility for three impurity concentrations, which
can be of great importance for technological applications.