Outmane, Oubram; Navarro, Oracio; Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Noverola, H.G
Resumen:
The effects of contact voltage and hydrostatic pressure on subband structure and optical
transitions in GaAs delta-Field Effect Transistor (d-FET) are theoretically studied. The
electronic structure of d-FET under hydrostatic pressure is determined by solving the
Schr€odinger equation using a theoretical model at low pressure. It is found that the subband
energies and intersubband optical absorption on d-FET are quite sensitive to the
contact voltage and applied hydrostatic pressure. Wherein, a blue-shifting as hydrostatic
pressure increases and a red-shifting as the contact potential increases, are shown. Our
results could be important for infrared optical device applications and useful in the design
of devices based on contact voltage and hydrostatic pressure-dependent optical processes.