In this work we present theoretical results for the electronic structure as well as for the absorption coefficient and relative refractive index change for an asymmetric double δ-doped like confining potential in the active ...

We present the differential capacitance profile for the delta-doped field effect transistor (δ-FET) in a GaAs matrix with both the presence and absence of a two-dimensional electronic gas produced by the delta-doped quantum ...

In this paper we theoretically investigate the role of hydrostatic pressure by analyzing its influence on potential barrier’s height in GaAs/AlGaAs core/shell spherical quantum dots. The values of hydrostatic pressure ...

In this study, the effects of electric and magnetic fields on the optical rectification and second and third harmonic generation in asymmetric double quantum well under the intense non-resonant laser field is theoretically ...

The conduction band states of GaAs-based vertically coupled double triangular quantum dots in two dimensions are investigated within the effective mass and parabolic approximation, using a diagonalization procedure to solve ...

We study the transmission, transport and electronic structure properties of monolayer Graphene Superlattices (GSLs). The transfer matrix method has been implemented to obtain the transmittance, linear-regime conductance ...

In this work, the study of the 1s‐like exciton states and binding energy is presented for coupled double zinc blende GaN/InGaN quantum wells. The effective mass approximation and a variational procedure are the key theoretical ...

This work presents a theoretical study of the lowest heavy- and light-exciton energy states in a c-AlGaN/GaN asymmetric double quantum well. It makes use of the variational method to determine the eigenstates of the ...

Using a variational procedure within the efective mass approximation, we have calculated the hydrogenic impurity binding energy as well as the impurity-related nonlinear optical absorption in a single quantum ring with ...

The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical ...