Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2493
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dc.contributor39645es_ES
dc.contributor.otherhttps://orcid.org/0000-0001-8373-1535-
dc.contributor.otherhttps://orcid.org/0000-0002-6232-9958-
dc.coverage.spatialGlobales_ES
dc.creatorMartínez Orozco, Juan Carlos-
dc.creatorMora Ramos, Miguel Eduardo-
dc.creatorDuque, Carlos Alberto-
dc.date.accessioned2021-05-18T16:28:33Z-
dc.date.available2021-05-18T16:28:33Z-
dc.date.issued2011-08-31-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn1521-3951es_ES
dc.identifier.urihttp://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2493-
dc.identifier.urihttps://doi.org/10.48779/dqhw-5x39-
dc.description.abstractThe theoretical study of linear and nonlinear optical absorption, and the nonlinear corrections to the refractive index in a GaAs n‐type delta‐doped field effect transistor is preformed taking into account the effects of applied hydrostatic pressure on the quantum well energy states, the size of the system and the Scottky barrier height. The potential well model includes Hartree and exchange effects via a Thomas‐Fermi‐based local density approximation. The allowed levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions. The results for the linear, nonlinear and total optical absorption, as well that those corresponding to the relative corrections of the host material refractive index in first and third order of the susceptibility, are reported for several values of the hydrostatic pressure. For P around 5 kbar, an enhancement in the linear and nonlinear contributions is detected.es_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.relationhttps://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.201147301es_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourcePhysica status solidi Sb. Basic Solid State Physics Vol. 249, pp. 146-152es_ES
dc.subject.classificationCIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]es_ES
dc.subject.otherdelta‐doped quantum wellses_ES
dc.subject.otherhydrostatic pressurees_ES
dc.subject.othernonlinear optical absorptiones_ES
dc.subject.otherrefractive indexes_ES
dc.titleThe nonlinear optical absorption and corrections to the refractive index in a GaAs n‐type delta‐doped field effect transistor under hydrostatic pressurees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

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