1. Repositorio Institucional Caxcán
  2. Doctorado en Ciencias Básicas
  3. *Documentos Académicos*-- Doc. en Ciencias Básicas
Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2450
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dc.contributor39645es_ES
dc.contributor.otherhttps://orcid.org/0000-0001-8373-1535-
dc.contributor.otherhttps://orcid.org/0000-0002-6232-9958-
dc.coverage.spatialGlobales_ES
dc.creatorTiutiunnyk, A.-
dc.creatorMora Ramos, Miguel Eduardo-
dc.creatorMorales Aramburo, Álvaro Luis-
dc.creatorDuque, Carlos Alberto-
dc.creatorRestrepo Arango, Ricardo León-
dc.creatorUngan, F.-
dc.creatorMartínez Orozco, Juan Carlos-
dc.creatorKasapoglu, E.-
dc.date.accessioned2021-05-04T19:27:01Z-
dc.date.available2021-05-04T19:27:01Z-
dc.date.issued2017-02-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn0925-3467es_ES
dc.identifier.urihttp://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2450-
dc.identifier.urihttps://doi.org/10.48779/1c5k-pb76-
dc.description.abstractIn this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.relationhttps://doi.org/10.1016/j.optmat.2017.01.001es_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourceOptical Materials Volume 64, February 2017, Pages 496-501es_ES
dc.subject.classificationCIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]es_ES
dc.subject.otherIntense laser fieldes_ES
dc.subject.otherQuantum welles_ES
dc.subject.otherRaman scatteringes_ES
dc.titleElectron Raman scattering in a double quantum well tuned by an external nonresonant intense laser fieldes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

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