Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2366
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dc.contributor39645es_ES
dc.contributor.otherhttps://orcid.org/0000-0001-8373-1535-
dc.contributor.otherhttps://orcid.org/0000-0002-6232-9958-
dc.coverage.spatialGlobales_ES
dc.creatorUngan, F.-
dc.creatorBahar, M. K.-
dc.creatorRodríguez Magdaleno, K.A.-
dc.creatorMora Ramos, Miguel Eduardo-
dc.creatorMartínez Orozco, Juan Carlos-
dc.date.accessioned2021-04-22T08:27:41Z-
dc.date.available2021-04-22T08:27:41Z-
dc.date.issued2021-03-01-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn1369-8001es_ES
dc.identifier.urihttp://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2366-
dc.identifier.urihttps://doi.datacite.org/dois/10.48779%2Fr6ab-7w76-
dc.description.abstractThe asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization for asymmetric potential profiles enables to the semiconductor device designers to have possible ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the potential profile. Once the potential profile is well defined, with the desired range on operation, the external factors play also an important role on the optical properties tuning. In particular, in this paper we reported the absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for an AlxGa1−xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions reported here.es_ES
dc.language.isospaes_ES
dc.publisherElsevieres_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourceCiencia de los materiales en el procesamiento de semiconductores, Vol.123es_ES
dc.subject.classificationINGENIERIA Y TECNOLOGIA [7]es_ES
dc.subject.otherAsymmetric AlxGa1-xAs/GaAs QWes_ES
dc.subject.otherNonlinear optical absorption coefficientes_ES
dc.subject.otherRelative refractive index changees_ES
dc.subject.otherElectric and magnetic field effectes_ES
dc.subject.otherIntense laser field effectes_ES
dc.titleInfluence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric AlxGa1−xAs/GaAs quantum welles_ES
dc.typearticlees_ES
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

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