Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

Tiutiunnyk, A.; Mora Ramos, Miguel Eduardo; Morales Aramburo, Álvaro Luis; Duque, Carlos Alberto; Restrepo Arango, Ricardo León; Ungan, F.; Martínez Orozco, Juan Carlos; Kasapoglu, E.

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dc.contributor	39645	es_ES
dc.contributor.other	https://orcid.org/0000-0001-8373-1535
dc.contributor.other	https://orcid.org/0000-0002-6232-9958
dc.coverage.spatial	Global	es_ES
dc.creator	Tiutiunnyk, A.
dc.creator	Mora Ramos, Miguel Eduardo
dc.creator	Morales Aramburo, Álvaro Luis
dc.creator	Duque, Carlos Alberto
dc.creator	Restrepo Arango, Ricardo León
dc.creator	Ungan, F.
dc.creator	Martínez Orozco, Juan Carlos
dc.creator	Kasapoglu, E.
dc.date.accessioned	2021-05-04T19:27:01Z
dc.date.available	2021-05-04T19:27:01Z
dc.date.issued	2017-02
dc.identifier	info:eu-repo/semantics/publishedVersion	es_ES
dc.identifier.issn	0925-3467	es_ES
dc.identifier.uri	http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2450
dc.identifier.uri	https://doi.org/10.48779/1c5k-pb76
dc.description.abstract	In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.	es_ES
dc.language.iso	eng	es_ES
dc.publisher	Elsevier	es_ES
dc.relation	https://doi.org/10.1016/j.optmat.2017.01.001	es_ES
dc.relation.uri	generalPublic	es_ES
dc.rights	Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América	*
dc.rights	Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.source	Optical Materials Volume 64, February 2017, Pages 496-501	es_ES
dc.subject.classification	CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]	es_ES
dc.subject.other	Intense laser field	es_ES
dc.subject.other	Quantum well	es_ES
dc.subject.other	Raman scattering	es_ES
dc.title	Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field	es_ES
dc.type	info:eu-repo/semantics/article	es_ES