Synthesis of Alloyed CdxZn1-xS Quantum Dots for Photovoltaic Applications

Abstract

This article describes the synthesis of Cdx Zn1- x S quantum dots prepared using the successive ionic layer adsorption and reaction method and incorporated into a photovoltaic device. The Cdx Zn1- x S quantum dots exhibit good optical and electrical properties. The photovoltaic device has the configuration TiO2 /Cd0.75 Zn0.25 S1 /ZnS. A photoconversion efficiency of 3.6% was obtained with this device. This efficiency corresponds to a 16% relative increment compared with a reference sample with the con- figuration TiO2 /Cd1 Zn0 S1 /ZnS. The improvement is associated with an increment in the open-circuit voltage (Voc) from 0.517 to 0.725 V. The corresponding short-circuit current density (Jsc) was reduced from 12.15 to 11.66 mA cm!2. Electrochemical impedance spectroscopy analyses confirm that the behavior of the device was due to a recombination rate reduction obtained as a result of surface passivation between the TiO2 layer and the CdxZnx-1S QDs interface.