Controlling the optical absorption properties of d-FETs by means of contact voltage and hydrostatic pressure effects

Abstract

The effects of contact voltage and hydrostatic pressure on subband structure and optical transitions in GaAs delta-Field Effect Transistor (δ-FET) are theoretically studied. The electronic structure of δ-FET under hydrostatic pressure is determined by solving the Schrödinger equation using a theoretical model at low pressure. It is found that the subband energies and intersubband optical absorption on δ-FET are quite sensitive to the contact voltage and applied hydrostatic pressure. Wherein, a blue-shifting as hydrostatic pressure increases and a red-shifting as the contact potential increases, are shown. Our results could be important for infrared optical device applications and useful in the design of devices based on contact voltage and hydrostatic pressure-dependent optical processes.