Repositorio Institucional Caxcán: Search

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Issue Date	Title	Author(s)
Apr-2004	An alternative way of calculating the superlattice Green function for discrete media	Vlaev, Stoyan; Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Velasco, Víctor
12-Dec-2008	Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure	Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Duque, Carlos Alberto; Mora Ramos, Miguel; Gaggero Sager, Luís Manuel
Aug-2009	Concentration and band offset dependence of the electronic basic transition of cubic InxGa1−xN/InyGa1−yN quantum wells	Hernández Cocoletzi, Heriberto; Contreras Solorio, David Armando; Vlaev, Stoyan; Rodríguez Vargas, Isaac
2009	Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential	Rodríguez Vargas, Isaac; Madrigal Melchor, Jesús; Vlaev, Stoyan
Jun-2008	k p calculations of p-type d-doped quantum wells in Si	Rodríguez Vargas, Isaac; Mora Ramos, Miguel
15-Feb-2007	Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel
Jul-2003	Thomas–Fermi–Dirac theory of the hole gas of a double p-type d-doped GaAs quantum wells	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Velasco, Víctor
Dec-2004	Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel
Feb-2005	Thomas–Fermi–Dirac calculations of valence band states in two p-type delta-doped ZnSe quantum wells	Rodríguez Vargas, Isaac; Gaggero Sager, Luís Manuel; Martínez Orozco, Juan Carlos
2009	Hole states in diamond p-delta-doped field effect transistors	Martínez Orozco, Juan Carlos; Rodríguez Vargas, Isaac; Mora Ramos, Miguel