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Unidad Académica de Física
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Issue Date
Title
Author(s)
Aug-2009
Concentration and band offset dependence of the electronic basic transition of cubic InxGa1−xN/InyGa1−yN quantum wells
Hernández Cocoletzi, Heriberto
;
Contreras Solorio, David Armando
;
Vlaev, Stoyan
;
Rodríguez Vargas, Isaac
2009
Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential
Rodríguez Vargas, Isaac
;
Madrigal Melchor, Jesús
;
Vlaev, Stoyan
2009
Hole states in diamond p-delta-doped field effect transistors
Martínez Orozco, Juan Carlos
;
Rodríguez Vargas, Isaac
;
Mora Ramos, Miguel
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Author
2
Vlaev, Stoyan
1
Contreras Solorio, David Armando
1
Hernández Cocoletzi, Heriberto
1
Madrigal Melchor, Jesús
1
Martínez Orozco, Juan Carlos
1
Mora Ramos, Miguel
Subject
1
e high density two-dimensional ho...
1
Electronic structure
1
local-density Thomas-Fermi-based
1
p-delta-doping in diamond
1
properties of p-type delta-doped ...
1
Quantum wells
1
Semiconductor compounds
1
Thomas-Fermi-Dirac
1
Tight-binding study
Has File(s)
3
true